Switzerland - STMicroelectronics ( http://www.st.com ) has introduced a new series of 30V surface-mount power transistors, achieving on-resistance as low as 2 milliohms (max) to increase the energy efficiency of products such as computers, telecom and networking equipment.
Using its latest-generation STripFET™ VI DeepGATE™ process, which has high equivalent cell density, ST has achieved the industry’s best RDS(ON) in relation to active chip size. This is around 20 percent better than the previous generation and allows the use of small surface-mount power packages in switching regulators and DC-to-DC converters.
The technology also benefits from inherently low gate charge, which allows engineers to use high switching frequencies and thereby specify smaller passive components such as inductors and capacitors.
The broad choice of industry-standard outlines, including SO-8, DPAK, 5x6mm PowerFLAT™, 3.3 x 3.3mm PowerFLAT™, PolarPAK®, through-hole IPAK and SOT23-6L, offer compatibility with existing pad/pin layouts at the same time as improving efficiency and power density. This will maximize market opportunities for ST’s STripFET VI DeepGATE family.
The first devices introduced using this new process include the STL150N3LLH6, which offers the lowest RDS(ON)* per area in the 5x6mm PowerFLAT package. The STD150N3LLH6 has also been introduced, in the DPAK package, with an RDS(ON) of 2.4 milliohms.
Samples are available for both devices, with production availability scheduled June 2009. Prices start at $0.95 for the STD150N3LLH6 and $1.20 for the STL150N3LLH6, in quantities of 2500 pieces.