Suitable for standard Si-semiconductors equipment (fitting wafer size, low bow and opaque substrate) to avoid expensive capital investments and allow for loss cost processing, AZZURRO's Si-substrates conduct the heat during epi-growth much better which allows for better temperature and accordingly wavelength homogeneity.

Featuring less bow during MQW-growth, it offers a symmetric stress distribution when bonded to Si-carrier for thin-film process. It also makes substrate removal for high-brightness thin-film LED designs much easier, less expensive and higher yield as you can use standard Si-semiconductors processes.

Allowing less expensive substrate without supply constraints like sapphire and silicon carbide, it also reduces dicing costs.

By offering the GaN-on-Si-wafers in 150 mm wafer size and also in 200 mm, the company helps customers scale their wafer size straight to Si-semiconductor compatible diameters. This, together with the appropriate low bow values, allows for the use of existing Si-processing capacity as well as business models where chip processing is outsourced to high-yielding and low-cost CMOS-foundries.