USA - Microsemi (www.microsemi.com) announced its 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications. SSR is used to send a message to an aircraft equipped with a radar transponder and collect information that allows air traffic controllers to identify, track and measure the location of that particular airplane. Microsemi's new 700 watt (W) peak 1011GN-700ELM operates at 1030 megahertz (MHz) and supports short- and long-pulsed extended length message (ELM). The new transistor is based on gallium nitride (GaN) on silicon carbide (SiC) technologies, which are particularly well-suited for high-power electronics applications.
"We are aggressively driving the development of next-generation GaN on SiC power devices to address growing opportunities for higher performance aerospace and military applications," said David Hall, vice president of Microsemi's RF Integrated Systems product group. "With today's new product introduction, we now offer highly reliable GaN on SiC transistors at 250, 500 and 700 watts for secondary surveillance radar search and tracking applications. We also have several additional GaN on SiC transistors in development that we will be rolling out later this year."
Microsemi's upcoming product lineup includes multiple high-pulsed power GaN on SiC transistors for both L, S and C-band radar systems. The company also offers a suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M. Several new products are in development for L-band avionics products covering 960-1215 MHz; L-band radar covering 1200-1400MHz; and S-band radar, higher power devices covering 2.7-2.9 GHz.
1011GN-700ELM RF Transistor The 1011GN-700ELM transistor delivers unparalleled performance of 700W of peak power with 21 decibel (dB) of power gain and 70 percent drain efficiency at 1030 Mhz to improve reduce overall drain current and heat dissipation. Other key product features include:
Short- and long-pulse burst formats:
ELM = 2.4 ms, 64 percent and 6.4 percent LTD
Excellent output power:
High power gain:
> 21 dB min
Controlled dynamic range:
1.0dB increments, 15 dB total
Drain bias - Vdd:
Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:
• Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining
• Highest peak power and power gain for reduced system power stages and final stage combining
• Single stage pair provides 1.3 kilowatts (kW) with margin, four-way combined to provide full system 4 kW
• High operating voltage at 65 volts reduces power supply size and dc current demand
• Extremely rugged performance improves system yields
• Amplifier size is 50 percent smaller than devices built with Si BJT or LDMOS
Packaging and Availability The 1011GN-700ELM is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Microsemi offers Demo units which are put on loan to the customer for a few weeks; due to the cost of the product free samples are not provided.