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Aerospace performances of IPDiA: -250°C up to 250°C grade silicon capacitors
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2016.04.07  19:17:24
트위터 페이스북 네이버 구글 msn

Abstract
This paper covers technological results achieved with silicon capacitors for Aerospace applications, including stability, reliability and frequency data at high temperatures, as well as thermal stress, vibration & shock tests and radiations stress, according to ESA TRP reference (n° T723-325QT).

Introduction
IPDiA (www.ipdia.com) silicon capacitors, already used extensively for a number of years in miniaturized high reliability equipment, show unique stability and reliability performances coupled with high temperature ratings and miniaturization in x, y axis, but also in z axis (low profile down to 100 µm thick) as well as extremely low total weight/µF.

IPDiA R&D center, with the help of Alter Technology, is evaluating the Silicon Technology for Aerospace applications, under ESA TRP reference (n° T723-325QT).

The manufacture of IPDiA passive components is based on the PICS technology (Passive Integration Connecting Substrate). The benefits of this integrated passive silicon technology have already been demonstrated in terms of extremely high reliability, low leakage current, high stability, low aging and compliancy with high operating temperature.

Due to their close integration to active components and innovative assembly technology, passive devices “on silicon die” offer significant improvements for signal integrity and space savings compared with the commonly used SMD components.

This paper reports on IPDiA high-density silicon capacitors for Aerospace applications, where miniaturization, weight saving with enhanced reliability are targeted. It presents some results on capacitance stability, voltage derating, leakage current, lifetime and electromagnetic compatibility.

Open the attached file for details.

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