USA - Richardson RFPD (www.richardsonRFPD.com) announced the availability and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors.
The AFM906NT1 is designed for handheld two-way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
Additional key features of the AFM906NT1 include:
· Supply voltage (typ.): 7.5 V
· P1dB (typ.): +37.8 dBm
· P1dB (typ.): 6 W
· Output power (typ.): 6.8 W
· Power gain (typ.): 20.3 dB @ 520 MHz
· Efficiency (typ.): 70.8%