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Richardson RFPD announces availability of 1000 V, 120 mΩ SiC power MOSFET from Wolfspeed
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2017.04.16  06:24:00
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Switzerland - Richardson RFPD (www.richardsonrfpd.com) announces the availability and full design support capabilities for a the C3M0120100K silicon carbide power MOSFET from Wolfspeed, a Cree Company.
The 1000 V, 120 mΩ device features Wolfspeed’s C3M™ SiC MOSFET technology and is available in an optimized four-lead TO-247-4 package with a separate driver source pin. It features 8 mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr).
It is optimized for renewable energy, EV battery charger, high-voltage DC/DC converter and switch-mode power supply applications.
Key features of the C3M0120100K include: 
·Drain source voltage (Vds max): 1000 V
·Continuous drain current (Id) at 25°C: 22 A
·Rds(on): 120 mΩ
·Total gate charge (Qg): 21.5 nC
·Maximum junction temperature: 150 °C
·Output capacitance (Coss): 40 pF
·Reverse-recovery charge (Qrr): 154 nC
·Reverse-recover time (Trr): 16 ns

To find more information or to purchase this product today online, please visit the C3M0120100K webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Wolfspeed, please visit the Wolfspeed storefront webpage.

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