Switzerland - Richardson RFPD (www.richardsonrfpd.com) announces the availability and full design support capabilities for the 1011GN-1200V power transistor from Microsemi Corporation.
The 1011GN-1200V is an internally-matched, common source, class AB, GaN on SiC HEMT capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32 µs, and 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance, and it utilizes gold metallization and eutectic attach to provide outstanding reliability and superior ruggedness.
Additional key features of the 1011GN-1200V include:
· Power gain: 20 dB (typ.)
· Drain efficiency: 75% (typ.)
· Supply voltage: 50 VDC
· Package: 55Q03
· Demonstration video
The 1011GN-1200V is part of Microsemi’s portfolio of GaN power transistors designed and optimized for radar and avionics that enable engineers to achieve the highest performance compact power amplifier designs that meet the need for smaller footprints, reduced weight, and higher power density and efficiency.
To find more information, or to purchase these products today online, please visit the Microsemi L-band Power Transistors for Radar & Avionics and 1011GN-1200V webpages. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Microsemi, please visit the Microsemi storefront webpage.